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DN0150ALP4 / DN0150BLP4
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
* * * * * * * Epitaxial Die Construction Ultra-Small Leadless Surface Mount Package Ultra Low Profile (0.4mm max) Complementary PNP Type Available (DP0150ALP4 / DP0150BLP4) Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
* * * * * * * * Case: DFN1006H4-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections Indicator: Collector Dot Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Ordering Information: See Page 3 Marking Information: See Page 3 Weight: 0.0008 grams (approximate)
NEW PRODUCT
1
3
E B
C
2
Bottom View Top View Device Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM IB Value 60 50 5 100 200 30 Unit V V V mA mA mA
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current
Thermal Characteristics
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 450 278 -55 to +150 Unit mW C/W C
Electrical Characteristics
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) hFE Min 60 50 5 -- -- -- 120 200 60 -- Typ -- -- -- -- -- 0.10 -- -- -- 1.3 Max -- -- -- 0.1 0.1 0.25 240 400 -- -- Unit V V V A A V -- Test Condition IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 60V, IE = 0 VEB = 5V, IC = 0 IC = 100mA, IB = 10mA VCE = 6V, IC = 2mA VCE = 10V, IE = -1mA f = 30MHz VCB = 10V, IE = 0, f = 1MHz
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage DC Current Gain DN0150ADJ DN0150BDJ SMALL SIGNAL CHARACTERISTICS www..com Transition Frequency Output Capactiance
Notes: 1. 2. 3. 4.
fT Cob
MHz pF
No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
1 of 4 www.diodes.com
July 2009
(c) Diodes Incorporated
DN0150ALP4 / DN0150BLP4
600 500
0.20
PD, POWER DISSIPATION (W)
IC, COLLECTOR CURRENT (A)
0.15
IB = 1mA IB = 2mA IB = 3mA IB = 4mA IB = 5mA
400
NEW PRODUCT
300
0.10
200
0.05
100
RJA = 278C/W
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 0 1,000
TA = 150C TA = 85C VCE = 6V
0 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (DN0150BLP4) 5
1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
IC/IB = 10
hFE, DC CURRENT GAIN
T A = 25C
TA = -55C
100
0.1
TA = 150C T A = 85C TA = 25C TA = -55C
10 0.1
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current (DN0150BLP4)
1,000
0.01 0.0001
0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current
VCE = 6V
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
IC/IB = 10
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1.0
1.0
0.8
TA = -55C
0.8
T A = -55C
0.6
T A = 25C
0.6
0.4 TA = 85C www..com
T A = 150C
TA = 25C
0.2
0.4
TA = 85C
0 0.0001
T A = 150C
0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current
1
0.2 0.0001
0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
2 of 4 www.diodes.com
July 2009
(c) Diodes Incorporated
DN0150ALP4 / DN0150BLP4
100
f = 1MHz
320 fT, GAIN-BANDWIDTH PRODUCT (MHz) 280 240 200 160 120 80 40 0
VCE = 6V f = 30MHz
CAPACITANCE (pF)
10
Cibo
NEW PRODUCT
1
Cobo
0 0.1
1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics
0
2 4 6 8 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
10
Ordering Information
Device DN0150ALP4-7 DN0150BLP4-7
Notes: 5.
(Note 5) Packaging DFN1006H4-3 DFN1006H4-3 Shipping 3000/Tape & Reel 3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DFN1006H4-3 Taping orientation
xx
xx= Product Type Marking Code: T3 = DN0150ALP4 T4 = DN0150BLP4 Dot Denotes Collector Side
xx
xx
Direction of feed
Package Outline Dimensions
A
A1
www..com
D
b1 E b2 e
DFN1006H4-3 Dim Min Max Typ A 0.40 A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 All Dimensions in mm
L2
L3
L1
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
3 of 4 www.diodes.com
July 2009
(c) Diodes Incorporated
DN0150ALP4 / DN0150BLP4 Suggested Pad Layout
C
X1
NEW PRODUCT
X
G2
Dimensions Z G1 G2 X X1 Y C
Y Z G1
Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7
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www..comDiodes Incorporated Copyright (c) 2009,
www.diodes.com
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
4 of 4 www.diodes.com
July 2009
(c) Diodes Incorporated

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